Abstract: This work systematically investigates the electrical properties and device physics in short-channel indium tin oxide (ITO) field-effect transistors (FETs). A $\mathbf{150-nm-channel-length}$ ...
As Apple approaches its annual iPhone launch season, new leaks suggest the company’s first foldable device could arrive with powerful hardware and the highest price tag ever seen on an iPhone.
Morning Overview on MSN
China claims sub-1 nm transistor that cuts power use for AI chips
A team of Chinese researchers has built a ferroelectric transistor with a gate length of just 1 nanometer that runs on 0.6 ...
Engineers leverage both device-specific and tool-level data to identify a process “sweet spot.” Tight, frequent tool-to-tool matching enables greater yield and fab flexibility. Machine learning helps ...
Abstract: The oxide thin-film transistor (OTFT) as a key component in integrated circuits, its performance optimization, and application expansion are essential. Among oxides, 1-D oxide semiconductors ...
The March 4 deadline to certify rank order lists for Match has a bit of special meaning this year. On March 4, fourth-year medical students will, in fact, march forth into their futures. The hard part ...
Adding big blocks of SRAM to collections of AI tensor engines, or better still, a waferscale collection of such engines, turbocharges AI inference, as has been shown time and again by AI upstarts ...
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