Abstract: This work systematically investigates the electrical properties and device physics in short-channel indium tin oxide (ITO) field-effect transistors (FETs). A $\mathbf{150-nm-channel-length}$ ...
As Apple approaches its annual iPhone launch season, new leaks suggest the company’s first foldable device could arrive with powerful hardware and the highest price tag ever seen on an iPhone.
Morning Overview on MSN
China claims sub-1 nm transistor that cuts power use for AI chips
A team of Chinese researchers has built a ferroelectric transistor with a gate length of just 1 nanometer that runs on 0.6 ...
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