USING TRENCHFET Gen III silicon, the Si4628DY SkyFET from Vishay Intertechnology offers a maximum RDS(ON) of 3 m at a 10-V gate drive and 3.8 m at 4.5 USING TRENCHFET® Gen III silicon, the Si4628DY ...
Malvern, Pa. — Vishay Intertechnology, Inc. has released a single-chip power MOSFET and Schottky diode device that is said to improve operational efficiency by up to 6% in DC/DC conversion ...
Automotive incandescent bulbs have largely given way to more efficient, reliable, stylish, and even safer light emitting diodes (LEDs). LEDs turn on in a fraction of the time and are especially useful ...
The relentless trend towards lower voltage, higher current and faster load slew rate poses a constant challenge for power supply designers. A decade ago, a typical power supply would have 5V and +/- ...
USING TRENCHFET® Gen III silicon, the Si4628DY SkyFET® from Vishay Intertechnology offers a maximum R DS(ON) of 3 mΩ at a 10-V gate drive and 3.8 mΩ at 4.5 V — presented as the industry's lowest ...
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