The world of power electronics witnessed a breakthrough in 1959 when Dawon Kahng and Martin Atalla invented the metal-oxide-semiconductor field-effect transistor (MOSFET) transistor at Bell Labs. The ...
GAN Limited (NASDAQ:GAN) announced on Monday that Sega Sammy Holdings (OTCPK:SGAMY) (OTCPK:SGAMF) is nearing completion of procurement of all gaming regulatory approvals necessary to complete its ...
Gallium nitride (GaN) is quickly becoming the semiconductor material of choice for both RF/microwave and higher-wavelength devices. It has long been a semiconductor foundation for light-emitting ...
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