Ultraviolet-B (UV-B) semiconductor lasers are highly sought for medical, biotechnology, and precision manufacturing ...

Renesas Electronics Corp.’s first blue-violet semiconductor laser diode integrates a new inner-stripe structure incorporating an optical waveguide into the semiconductor device Tokyo, Japan: Featuring ...

LED applications will become the driving force of the bulk GaN market, surpassing established laser diode (LD) and emerging power electronics segments. However, major changes could occur if 4 bulk GaN ...

A group at the University of Montpellier's Institute of Electronics and Systems (IES) has demonstrated mid-IR semiconductor lasers grown expitaxially on an on-axis silicon substrate, said to be the ...

This image shows a state-of-the-art design of GaN p-n junction diodes that has resulted in near-unity ideality factor, avalanche breakdown capability, and record-breaking power performance. Insets ...

Asahi Kasei Corporation succeeded in designing a laser diode that emits deep-ultraviolet light. The laser diode emits the world’s shortest lasing wavelength, at 271.8 nanometers (nm), under pulsed ...

Taking gallium nitride power ICs to the next level, researchers at Imec report co-integration of Schottky barrier diodes and high-electron-mobility transistors (HEMTs) on a smart power platform. The ...

Eindhoven, Netherlands: Scientists from the Dutch University of Groningen and Philips Research have fabricated arrays of molecular diodes on standard substrates with high yields. The 1.5mm molecular ...

High-power direct-diode lasers have emerged as a competitive option for applications like cladding, welding and heat treating. Stuart Woods of Coherent explains why the basic construction and ...

Highly functional and free-form displays are critical components to complete the technological prowess of wearable electronics, robotics, and human-machine interfaces. A team created stretchable OLEDs ...